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SEMICONDUCTOR
HGTG30N60C3D
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Package
JEDEC STYLE TO-247
E C G
August 1995
Features
* * * * * 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode
o
Description
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
PACKAGING AVAILABILITY PART NUMBER HGTG30N60C3D PACKAGE TO-247 BRAND G30N60C3D
E
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49014.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTG30N60C3D 600 63 30 25 252 20 30 60A at 600V 208 1.67 -40 to +150 260 4 15 UNITS V A A A A V V W W/oC oC oC s s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = +125oC, RGE = 25.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1995
File Number
4041
1
Specifications HGTG30N60C3D
Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 20V TJ = +150oC, VGE = 15V, RG = 3, L = 100H VCE(PK) = 480V VCE(PK) = 600V TC = +25oC TC = +150oC TC = +25oC TC = +150oC TC = +25oC MIN 600 15 3.0 TYP 25 1.5 1.7 5.2 MAX 250 3.0 1.8 2.0 6.0 100 UNITS V V A mA V V V
Gate-Emitter Threshold Voltage
VGE(TH) IGES SSOA
Gate-Emitter Leakage Current Switching SOA
200 60
-
nA A A
Gate-Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON)
IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V
-
8.1 162 216 40 45 320 230 1050 2500 1.75 52 42 -
180 250 400 275 2.2 60 50 0.6 1.3
V nC nC ns ns ns ns J J V ns ns
oC/W oC/W
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1) Diode Forward Voltage Diode Reverse Recovery Time
tD(ON)I tRI tD(OFF)I tFI EON EOFF VEC tRR
TJ = +150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 3, L = 100H
IEC = 30A IEC = 30A, dIEC/dt = 100A/s IEC = 1.0A, dIEC/dt = 100A/s
-
Thermal Resistance
RJC
IGBT Diode
NOTE: 1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses.
2
HGTG30N60C3D Typical Performance Curves
ICE, COLLECTOR-EMITTER CURRENT (A) 150 125 100 TC = +150oC 75 TC = +25 C 50 25 0 4 TC = -40oC
o
PULSE DURATION = 250s DUTY CYCLE <0.5%, VCE = 10V
ICE, COLLECTOR-EMITTER CURRENT (A)
150 125
PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = +25oC VGE = 15.0V 12.0V 10.0V
9.5V 100 75 50 7.0V 25 0 9.0V
8.5V 8.0V 7.5V 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 10
6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V)
12
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR-EMITTER CURRENT (A)
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 125 100
ICE, COLLECTOR-EMITTER CURRENT (A)
150 TC = -40oC
150 125 100 75 50 25 0 PULSE DURATION = 250s DUTY CYCLE <0.5% VGE = 15V TC = +150oC TC = -40oC TC = +25oC
TC = 75 TC = +150oC 50 25 0
+25oC
0
1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
0
1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
VGE = 15V
ICE , DC COLLECTOR CURRENT (A)
VCE = 360V, RGE = 25, TJ = +125oC
60 50 40 30 20 10 0 25
450 20 ISC 400 350 15 300 250 10 tSC 150 5 10 13 11 12 14 VGE , GATE-TO-EMITTER VOLTAGE (V) 100 15 200
50
75 100 125 TC , CASE TEMPERATURE (oC)
150
FIGURE 5. MAX. DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3
ISC, PEAK SHORT CIRCUIT CURRENT (A)
70
25
500
HGTG30N60C3D Typical Performance Curves
200 tD(OFF)I , TURN-OFF DELAY TIME (ns) tD(ON)I , TURN-ON DELAY TIME (ns) TJ = +150oC, RG = 3, L = 100H, VCE(PK) = 480V 100 VGE = 10V 50 40 30 20 VGE = 15V
(Continued)
500 TJ = +150oC, RG = 3, L = 100H, VCE(PK) = 480V 400 VGE = 15V VGE = 10V 200
300
10 10
50 30 40 ICE , COLLECTOR-EMITTER CURRENT (A) 20
60
100 10 50 20 30 40 ICE , COLLECTOR-EMITTER CURRENT (A) 60
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
500 tRI , TURN-ON RISE TIME (ns)
TJ = +150oC, RG = 3, L = 100H, VCE(PK) = 480V
500 TJ = +150oC, RG = 3, L = 100H, VCE(PK) = 480V 400
VGE = 10V 100
tFI , FALL TIME (ns)
300 VGE = 10V 200 VGE = 15V
VGE = 15V
10 10
30 40 50 ICE , COLLECTOR-EMITTER CURRENT (A)
20
60
100 10
50 20 30 40 ICE , COLLECTOR-EMITTER CURRENT (A)
60
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
8.0 EON , TURN-ON ENERGY LOSS (mJ) 7.0 6.0 5.0
EOFF , TURN-OFF ENERGY LOSS (mJ)
TJ = +150oC, RG = 3, L = 100H, VCE(PK) = 480V
6.0 TJ = +150oC, RG = 3, L = 100H, VCE(PK) = 480V 5.0 4.0 VGE = 10V or 15V 3.0 2.0 1.0 0 10
VGE = 10V 4.0 3.0 2.0 1.0 0 10 20 VGE = 15V
50 30 40 ICE , COLLECTOR-EMITTER CURRENT (A)
60
20 30 40 50 ICE , COLLECTOR-EMITTER CURRENT (A)
60
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
4
HGTG30N60C3D Typical Performance Curves
500 fMAX , OPERATING FREQUENCY (kHz) TJ = +150oC, TC = +75oC RG = 3, L = 100H 100 VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.6oC/W 1 5 VGE = 10V
(Continued)
250 TJ = 150oC, VGE = 15V, L = 100H
ICE, COLLECTOR-EMITTER CURRENT (A)
200
150 LIMITED BY CIRCUIT
10
100
50
10 20 30 40 ICE, COLLECTOR-EMITTER CURRENT (A)
60
0
0
100
200
300
400
500
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
VCE , COLLECTOR - EMITTER VOLTAGE (V)
8000 FREQUENCY = 400kHz 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 COES 1000 CRES 0 0 5 10 15 20 25 CIES
600
IG REF = 3.54mA, RL = 20, TC = +25oC
15 VGE, GATE-EMITTER VOLTAGE (V)
480 VCE = 600V 360
12
9
240
VCE = 400V VCE = 200V
6
120
3
0
0
40
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
80 120 QG , GATE CHARGE (nC)
160
0 200
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
ZJC , NORMALIZED THERMAL RESPONSE
100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC PD t2 t1
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
HGTG30N60C3D Typical Performance Curves
200 IEC , FORWARD CURRENT (A)
(Continued)
60 TC = +25oC, dIEC/dt = 100A/s tR , RECOVERY TIMES (ns) 50 tRR 40 30 20 10 0
+100oC 10
tA tB
+150oC 1 0
+25oC
0.5
2.0 1.0 1.5 VEC , FORWARD VOLTAGE (V)
2.5
3.0
1
5 10 IEC , FORWARD CURRENT (A)
30
FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT
Test Circuit and Waveforms
L = 100H RHRP3060 VGE
90% 10% EOFF EON
RG = 3 +
VCE 90% VDD = 480V ICE 10% tD(OFF)I tFI tRI tD(ON)I
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
6
HGTG30N60C3D Operating Frequency Information
Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/ RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.
Trademark Emerson and Cumming, Inc.
7
HGTG30N60C3D Packaging
E A OS Q OR D TERM. 4 OP
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE INCHES SYMBOL A b b1 b2 c MIN 0.180 0.046 0.060 0.095 0.020 0.800 0.605 MAX 0.190 0.051 0.070 0.105 0.026 0.820 0.625 MILLIMETERS MIN 4.58 1.17 1.53 2.42 0.51 20.32 15.37 MAX 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES 2, 3 1, 2 1, 2 1, 2, 3 4 4 5 1 -
L1 L
b1 b2 c b
1 2 3 J1 3 2 1
D E e e1 J1 L L1 OP
0.219 TYP 0.438 BSC 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270
5.56 TYP 11.12 BSC 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85
e e1
BACK VIEW
LEAD NO. 1 LEAD NO. 2 LEAD NO. 3 TERM. 4
- GATE - COLLECTOR - EMITTER - COLLECTOR
Q OR OS
NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS UNITED STATES Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400
SEMICONDUCTOR
8

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